PART |
Description |
Maker |
M5M512R M5M512R88DJ-10 M5M512R88DJ-12 M5M512R88DJ- |
1048576-BIT (131072-WORD BY 8-BIT) CMOS STATIC RAM 1048576位(131072 - Word位)的CMOS静态RAM From old datasheet system
|
Mitsubishi Electric, Corp. Mitsubishi Electric Corporation
|
M5M5V108DFP-70H M5M5V108DKV-70H M5M5V108DVP-70H M5 |
1048576-bit (131072-word by 8-bit) CMOS static RAM 1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM 1048576位(131072 - Word8位)的CMOS静态RAM
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM 120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
HN28F101FP-15 HN28F101P-12 HN28F101P-20 HN28F101R- |
131072-word 8-bit CMOS Flash Memory 131072-word ?? 8-bit CMOS Flash Memory 131072-word x 8-bit CMOS Flash Memory
|
ETC
|
MC-454AC726 |
4M-Word By 72-BIT Dynamic RAM Module(4M×72位动态RAM模块) 分词72位动态内存模块(4米72位动态内存模块) 4M-Word By 72-BIT Dynamic RAM Module(4M?72浣????AM妯″?)
|
NEC Corp. NEC, Corp.
|
M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP |
4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
HN27C101ATT |
131072-word 5 8-bit CMOS One Time Electrically Programmable ROM
|
Renesas Technology / Hitachi Semiconductor
|
TC55V1001F TC55V1001F-10 TC55V1001F-85 TC55V1001FT |
131,072 WORD BY 8 BIT STATIC RAM 131072 Word8位静态RAM
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC55 |
131,072 WORD x 8 BIT STATIC RAM 131072字8位静态RAM 131072 WORD x 8 BIT STATIC RAM
|
Toshiba, Corp. Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
UPD4217805LLE-A50 UPD42S17805LLE-A50 UPD4217805LG5 |
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,HYPER PAGE MODE 3.3运行16位动态随机存储器2m-word8位,超页模式
|
NEC TOKIN America Inc. NEC TOKIN, Corp.
|